单晶硅表面硝酸银活化化学镀镍工艺

Electroless Nickel Plating Process for Single Crystal Silicon Involving Silver Nitrate Activation

单晶硅表面局部金属化可用于一些特殊的技术领域，为了寻找成本低且环保的化学镀镍无钯活化工艺，以AgNO3为活化剂，加上适当的复合添加剂对单晶硅进行化学镀镍前活化处理。通过扫描电镜、耐蚀性试验及相关检测标准，研究了AgNO3浓度、活化时间、活化温度对镀层沉积速率、覆盖率和镀层光亮度、结合力及耐蚀性的影响。结果表明：当AgNO3浓度为3．5～7．5g/L，温度为40～50℃，活化时间为12～20min时，镀层沉积速率和覆盖率较好，镀层表面均匀、光亮、结合力强、耐蚀性好；该活化工艺及其制备的局部镍镀层能够很好址．应用于多孔硅的制备．

AgNO3 was adopted as the activation agent and combined with proper composite additives to activate single crystal silicon before Ni electroless plating.The effects of AgNO3 concentration,activation time and activation temperature on the deposition rate,coverage,brightness,adhesion force and corrosion resistance of electroless Ni coating were investigated based on scanning electron microscopic observation,corrosion behavior testing and relevant standards for monitoring.It was found that under a AgNO3 concentration of 3.5~7.5 g/L,temperature of 40~50 ℃ and activation time of 12~20 min,high deposition rate and coverage of electroless Ni coating were obtained;and resultant Ni coating was uniform and bright,and possessed strong adhesion force to substrate as well as good corrosion resistance.The established activation process and resultant electroless Ni coating could be well applied to fabricating porous silicon.