摘要
采用催化剂辅助化学气相沉积法,通过固-液-气(V-L-S)机理控制在硅衬底上制备了高质量的InN纳米线。利用FESEM、XRD、HRTEM对制备的InN纳米线的表面形貌和结构进行了表征。分析表明合成的InN纳米线为标准的六方纤锌矿结构,纳米线沿[102]方向生长。室温PL光谱表明,制备的InN纳米线在1580nm(0.78eV)处存在很强的无缺陷的带边发射,与六方纤锌矿结构InN单晶发射峰位置一致,表现出良好的光电性能。
High-quality single crystalline InN nanowires were obtained on silicon substrate using the catalyst assisted CVI） method via the V-L-S process. The morphologies of the synthesized InN nanowires were characterized by FESENL XRD, HRTEM were employed to measure the lattice structures of the synthesized InN nanowires. Re- sults show that the synthesized InN nanowires has standard wurtzite structure and hexagonal systew. The nanowires grow along the [102] direction. The room temperature photoluminescence （PL） measurements of InN nanowires ex- hibited a strong near-band-edge emission at 1580 nm （0. 78 eV）, according with wurtzite structure InN single crystal emission peak, and without any defects related emissions, which shows its potential applications in optoelectronics.
