叠层芯片温度测量实验研究

Experimental Study of Temperature Measurement for Stacked Die Chip

使用MP/MB红外测温仪对加热台及叠层芯片的结构表面进行测试,对所获得的温度数据进行分析建模。实验发现叠层芯片结构表面悬臂区域和非悬臂区域的温度存在差异,并讨论了其原因。进一步对不同区域的温度曲线进行拟合,发现修改的Logistic模型可以很好地用于叠层芯片结构测温数据的建模和阐释其温升机制缘由。实验结果有助于叠层芯片悬臂键合动力学机理的研究。

A MP/MB infrared radiation thermometer was used to measure the temperatures of the heat stage and the structural surface of the stacked die chip, and the results were analyzed and then modeled. Experimental results include temperature difference of the cantilever and non--cantilever ar- ea of the stacked die chip;and the reason discussion. Through the curve fitting of the temperatures of the different areas, it is found modified Logistic model can be used to understand the stacked die chip structure thermometry data modeling and the temperature rise mechanism properly. The results will be helpful to further studies of the cantilever bonding kinetic mechanism.