Mg^(2+)掺杂对SrTiO_3薄膜光电特性的影响

The influence of doped Mg^(2+) SrTiO_3 film photoelectric properties

利用溶胶-凝胶法在Al2O3陶瓷片上制备掺Mg的SrTiO3薄膜。在SrTiO3中掺杂不同含量的Mg离子,Mg在钛酸锶中取代钛位,形成受主掺杂。研究了掺杂对薄膜电阻率的影响,实验表明,当掺杂浓度为4%时,电阻率最小。当掺杂浓度为4%时,薄膜电阻率会随着光功率变化而变化,当光功率<100W时,电阻迅速减小,超过100W时,减小幅度变小。

The different content of Mg ion doping SrTiO3 thin film ceramic wafer was prepared by sol-gel on the A12 03, Mg in SrTiO3 replace titanium, forming an aeceptor doping. This paper studied the influence of differ ent content doping on the film＇s resistively, show that, when the doping concentration was 4, resistively minimum. Also studied doping concentration was 4, film resistively with the optical power change, show that, when the light power was less than 100W, resistively decreases rapidly, more than 100W, reduced smal- ler amplitude.