Ge/Pb/Si(111)生长中Ge原子沿团簇边缘扩散的三维Monte-Carlo模拟

3D Simulation of Ge Edge-Diffusion Around Clusters in Ge/Pb/Si(111) Growth

用动态Monte-Carlo方法对Ge在单层表面活性剂Pb覆盖的Si(111)表面上沿团簇边缘扩散进行三维模拟.重点讨论Ge原子是否沿团簇边缘扩散,沿边缘扩散时的最大扩散步数及最近邻原子数对三维生长的影响,并计算薄膜表面粗糙度研究三维生长模式.模拟表明Ge沿团簇边缘扩散的行为对薄膜生长模式的影响很大,同时讨论了ES势对三维生长模式的影响.

A kinetic Monte Carlo simulation is shown to investigate 3-dimensional growth of Ge on Si（111） substrate as monolayer of Pb atoms are pre-deposited as surfactant.We focus on Ge diffusion around edge of clusters.Effects of Ge diffusing around cluster edge,maximum diffusion steps for edge-diffusion and number of nearest neighbors on 3D growth mode are discussed.Coverage dependences of surface roughness are calculated to investigate growth mode.It shows that Ge edge-diffusion around clusters plays an important role on growth mode of 3D film growth.Effects of ES barrier on growth mode on Ge/Pb/Si（111） are explored.