工作气压对室温磁控溅射CIGS膜的影响

Growth and Characterization of Cu(In,Ga)Se_2 Films byRF Magnetron Sputtering at Room Temperature

研究了工作气压对磁控溅射法制备CIGS薄膜的影响,采用X射线衍射,扫描电镜,X射线萤光光谱和X射线能量色散谱分析了膜层的组织和成分。研究发现,工作气压升高,薄膜沉积速率降低。当工作气压低于0.2 Pa时,薄膜致密均一;高于0.2 Pa表面出现Cu2-xSe相,并随气压升高在膜表面的覆盖面积增大。对气压影响薄膜表面形貌的机理采用成膜动力学理论进行了讨论。

The Cu（In,Ga）Se2（CIGS） thin films were deposited by RF magnetron sputtering of a single quaternary target at room temperature on glass substrates, without additional selenization. The impacts of deposition conditions, in- cluding the argon pressure, sputtering power, and substrate temperature, on the quality of the CIGS films were evaluated. The microstructures of the as-deposited CIGS films were characterized with X-ray diffraction, scanning electron mi- croscopy, X-ray fluorescence spectroscopy, and energy dispersive spectroscopy. The results show that the pressure strongly affects the growth and properties of the films. For example, the deposition rate decreased with an increase of the pressure. At 0.2 Pa,the compact and uniform CIGS films were grown;at a pressure higher than 0.2 Pa, non-uniform,rough Cu2-x Se-phased grains formed, gradually spreading over the film surfaces with an increased pressure. Possible mechanisms re- spensible for the formation of Cu2-xSe phase were tentatively discussed on the basis of dynamics theory of film growth.