抗辐射模拟CMOS集成电路研究与设计

Research and Design of Anti-radiation Analog CMOS Integrated Circuits

为研究宇宙辐射环境中航天器里的模拟互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)集成电路性能和各种效应,并在辐射效应所产生机制的基础上,从设计和工艺方面提出了模拟CMOS集成电路主要抗辐射加固设计方法。在宇宙环境中,卫星中的模拟CMOS集成电路存在CMOS半导体元器件阈值电压偏离、线性跨导减小、衬底的漏电流增加和转角1/f噪声幅值增加。所以提出了3种对模拟CMOS集成电路进行抗辐射加固的方法:1)抗辐射模拟CMOS集成电路的设计;2)抗辐射集成电路版图设计;3)单晶半导体硅膜(Silicon on Insulator,SOI)抗辐射工艺与加固设计。根据上面的设计方法研制了抗辐射加固模拟CMOS集成电路,可以取得较好的抗辐射效果。

The characteristics and effects of analog CMOS integrated circuit on spacecraft were analyzed in the radiation environment. Based on the generation of radiation effect, the main anti-radiation design methods were introduced for the analog CMOS integrated circuit designing and processing. In the outer space, threshold voltage deviation, transdiode decreasing, substrate leakage current increasing and corner noise amplitude increasing occur to the CMOS semiconductor components in the analog CMOS integrated circuit. As a result, there are three kinds of methods proposed to protect against radiation of the analog integrated circuits, including anti-radiation analog CMOS integrated circuit＇, anti-radiation PCB＇ and silicon CMOS on insulator anti integrated circuits radiation processing. Accordingly, the designed anti-radiation analog obtain the ideal effect in anti-radiation function.