IGBT电气参数的温度特性分析

Temperature Characteristic of Electric Parameters of IGBT

半导体功率器件IGBT的电气性能与结温关系密切,研究其在不同结温下的电气参数特性对于提高应用器件的可靠性具有重要的意义。论文基于IGBT结构和半导体物理理论,通过实验测试分析了IGBT击穿电压、集电极漏电流、栅极门槛电压、开关时间等参数与温度的关系,并得到了这些参数的温度特性曲线。

As the electric performances of semiconductor devices are tightly related to their junction temperature, the research on elec- trical parameters characteristic at different iunction temperature is a significant meaning to improve application reliability of IGBT. Based on the structure of IGBT and semiconductor physic theory, this paper analyzed the relation between break voltage, collector drain current, gate threshold voltage, switching time and temperature, and also obtained the temperature characteristic curve of these parameters.