摘要
设计了一种基于绝缘硅材料的超小微环相移器,能够在自由频谱范围内实现2π相移的同时相移达到最佳线性化.根据全通微环谐振器的相移特性可知,在临界耦合点时微环谐振器达到π的相移,在过耦合领域达到2π相移.分析了直波导宽度及间距两个参量,用精细度F表征间距,讨论了由于这两个参量变化对微环谐振器相移的影响,并且给出了设计的相移范围和相应的功率变化.实验结果表明:若采用40GHz的射频信号,设计的微环相移器射频相移范围为0~4rad,功率变化不到6dB.
A ultra-small micro-ring phase shifter based on the silicon-on-insulator (SOI) material is designed. 2n phase shift in the free spectral range and optimal linearization is achieved. According to the phase shift characteristics of the micro-ring resonator all-pass phase structure, phase shift of the micro-ring is 7r at the critical coupling area and 2n in the over coupling area. Two parameters (straight waveguide width and spacing) of the micro-ring are investigated which affect the phase shift. Finesse F also is used as a parameter for spacing, and micro-ring resonator' phase shift combined with the power of change is discussed. The experimental results show that the designed micro-ring phase shifter can achieve the RF phase shift of 0-4 tad, and RF power variation is less than 6 dB with a 40 GHz RF signal.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2013年第6期631-636,共6页
Acta Photonica Sinica
基金
国家自然科学基金(Nos.61102075
51075420)
重庆市电子产业发展基金资助
关键词
绝缘硅
微环相移器
射频相移
射频功率
Silicon-on-insulator
Micro-ring phase shifter
Radio frequency phase shift
Radio frequency power