摘要
Flexible TiO2 memory devices are fabricated on a plastic substrate at room temperature. The metal-insulator-metal (MIM) structure is grown on polyimide (PI). Several metals with different ductilities, such as Al, W, Cu and Ag, are selected as electrode. The test results show that the samples have stable resistive switching behaviors, and the electric characteristics can stay stable even after the radius of substrate is bent up to 10 mm. After 103 times of substrate bend-ing, the memory cells with W as bottom electrode on PI still show stable resistive switching characteristics and low switching voltages. The set voltage and reset voltage can be as low as 0.9 V and 0.3 V, respectively.
Flexible TiO2 memory devices are fabricated on a plastic substrate at room temperature. The metal-insulator-metal （MIM） structure is grown on polyimide （PI）. Several metals with different ductilities, such as Al, W, Cu and Ag, are selected as electrode. The test results show that the samples have stable resistive switching behaviors, and the electric characteristics can stay stable even after the radius of substrate is bent up to 10 mm. After 10^3 times of substrate bending, the memory cells with W as bottom electrode on PI still show stable resistive switching characteristics and low switching voltages. The set voltage and reset voltage can be as low as 0.9 V and 0.3 V. respectively.
基金
the National Natural Science Foundation of China (Nos.61274113 and 11204212)
the Program for New Century Excellent Talents in University (No.NCET-11-1064)
the Tianjin Natural Science Foundation (Nos.13JCYBJC15700, 10SYSYJC27700 and 10ZCKFGX 01200)
the Tianjin Science and Technology Developmental Funds of Universities and Colleges (No.20100703)
