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DISCONTINUOUS GALERKIN TIME DOMAIN METHOD FOR SOI THIN-RIDGE WAVEGUIDE PROBLEM

DISCONTINUOUS GALERKIN TIME DOMAIN METHOD FOR SOI THIN-RIDGE WAVEGUIDE PROBLEM
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摘要 A novel high-order three-dimensional(3-D)discontinuous Galerkin time domain(DGTD)method based on a normalized formulation of Maxwell′s equations is developed for modeling and simulating silicon-on-insulator(SOI)thin-ridge waveguide.The DGTD method employs unstructured meshes and piecewise high-order polynomials for spatial discretization,and Runge-Kutta methods for time integration.It is found that the numerical results of the leakage loss of SOI thin-ridge waveguide agree well with those of analytical solutions,which proves that the proposed method is an ideal tool for the quantitative analysis for SOI thin-ridge waveguide. A novel high-order three-dimensional (3-D) discontinuous Galerkin time domain (DGTD) method based on a normalized formulation of Maxwell's equations is developed for modeling and simulating silicon-on-insulator (SOD thin-ridge waveguide. The DGTD method employs unstructured meshes and piecewise high-order polynomials for spatial discretization, and Runge-Kutta methods for time integration. It is found that the numerical results of the leakage loss of SOI thin-ridge waveguide agree well with those of analytical solutions, which proves that the proposed method is an ideal tool for the quantitative analysis for SOI thin-ridge waveguide.
出处 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI 2013年第2期162-168,共7页 南京航空航天大学学报(英文版)
基金 Supported by the Priority Academic Program Development of Jiangsu Higher Education Institutions
关键词 discontinuous Galerkin time domain(DGTD) Maxwell′s equations silicon-on-insulator(SOI) thinridge waveguides leakage loss discontinuous Galerkin time domain (DGTD) Maxwell's equations silicon-on-insulator (SOD thinridge waveguides leakage loss
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