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Characterization of CdMnTe radiation detectors using current and charge transients

Characterization of CdMnTe radiation detectors using current and charge transients
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摘要 Charge transport characteristics of Cd_(0.95)Mn_(0.05)Te:In radiation detectors have been evaluated by combining time resolved current transient measurements with time of flight charge transient measurements.The shapes of the measured current pulses have been interpreted with respect to a concentration of net positive space-charge, which has resulted in an electric field gradient across the detector bulk.From the recorded current pulses the charge collection efficiency of the detector was found to approach 100%.From the evolution of the charge collection efficiency with applied bias,the electron mobility-lifetime product ofμ_nτ_n =(8.5±0.4)×10^(-4) cm^2/V has been estimated.The electron transit time was determined using both transient current technique and time of flight measurements in the bias range of 100-1900 V.From the dependence of drift velocity on applied electric field the electron mobility was found to beμ_n =(718±55) cm^2/(V·s) at room temperature. Charge transport characteristics of Cd_(0.95)Mn_(0.05)Te:In radiation detectors have been evaluated by combining time resolved current transient measurements with time of flight charge transient measurements.The shapes of the measured current pulses have been interpreted with respect to a concentration of net positive space-charge, which has resulted in an electric field gradient across the detector bulk.From the recorded current pulses the charge collection efficiency of the detector was found to approach 100%.From the evolution of the charge collection efficiency with applied bias,the electron mobility-lifetime product ofμ_nτ_n =(8.5±0.4)×10^(-4) cm^2/V has been estimated.The electron transit time was determined using both transient current technique and time of flight measurements in the bias range of 100-1900 V.From the dependence of drift velocity on applied electric field the electron mobility was found to beμ_n =(718±55) cm^2/(V·s) at room temperature.
出处 《Journal of Semiconductors》 EI CAS CSCD 2013年第7期19-25,共7页 半导体学报(英文版)
基金 supported in part by the Cooperative Research Centre for Biomedical Imaging Development
关键词 radiation detector CDMNTE CMT detector fabrication transient current technique time of flighttechnique radiation detector CdMnTe CMT detector fabrication transient current technique time of flighttechnique
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  • 1Shockley W. Currents to conductors induced by a moving point charge. J Appl Phys, 1938,9: 635.
  • 2Ramo S. Currents induced by electron motion. Proc IRE, 1939, 27: 584.
  • 3Shockley W, Pearson G L, Haynes R J. Hole injection in germanium-quantitative studies and filamentary transistors. Bell System Technical Journal, 1949,28: 344.
  • 4Quaranta A A, Martini M, Ottaviani G. Fast pulse pickoff with semiconductor radiation detectors. Nucl Inst Meth, 1967, 47: 10.
  • 5Quaranta A A, Cipolla F, Martini M. On a new method for mea?suring the charge carriers drift mobility in high resistivity silicon. Phys Lett, 1965, 17: 102.
  • 6Crandall R S. Trap spectroscopy ofa-Si:H diodes using transient current techniques. J Electr Mater, 1980, 9: 713.
  • 7Kraner H W, Li Z, Fretwurst E. The use of the signal current pulse shape to study the internal electric field profile and trapping effects in neutron damaged silicon detectors. Nucl Inst Meth A, 1993,326:350.
  • 8Bates A G, Moll M. A comparison between irradiated magnetic Czochralski and float zone silicon detectors using the transient current technique. Nucl lnst Meth A, 2005, 555: 113.
  • 9Harkonen J, Ereminb V, Verbitskaya E, et al. The cryogenic tran?sient current technique (C- TCT) measurement setup of CERN RD39 collaboration. Nucl Inst Meth A, 2007, 581: 347.
  • 10Williams M L, Donnelly I J. An investigation of electric field behaviour in semi-insulating GaAs using current pulses. J Phys D: Appl Phys, 1996, 29: 1997.

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