期刊文献+

Design and measurement of a piezoresistive ultrasonic sensor based on MEMS

Design and measurement of a piezoresistive ultrasonic sensor based on MEMS
原文传递
导出
摘要 A kind of piezoresistive ultrasonic sensor based on MEMS is proposed,which is composed of a membrane and two side beams.A simplified mathematical model has been established to analyze the mechanical properties of the sensor.On the basis of the theoretical analysis,the structural size and layout location of the piezoresistors are determined by simulation analysis.The boron-implanted piezoresistors located on membrane and side beams form a Wheatstone bridge to detect acoustic signal.The membrane-beam microstructure is fabricated integrally by MEMS manufacturing technology.Finally,this paper presents the experimental characterization of the ultrasonic sensor,validating the theoretical model used and the simulated model.The sensitivity reaches -116.2 dB(0 dB reference = 1 V/μbar,31 kHz),resonant frequency is 39.6 kHz,direction angle is 55°. A kind of piezoresistive ultrasonic sensor based on MEMS is proposed,which is composed of a membrane and two side beams.A simplified mathematical model has been established to analyze the mechanical properties of the sensor.On the basis of the theoretical analysis,the structural size and layout location of the piezoresistors are determined by simulation analysis.The boron-implanted piezoresistors located on membrane and side beams form a Wheatstone bridge to detect acoustic signal.The membrane-beam microstructure is fabricated integrally by MEMS manufacturing technology.Finally,this paper presents the experimental characterization of the ultrasonic sensor,validating the theoretical model used and the simulated model.The sensitivity reaches -116.2 dB(0 dB reference = 1 V/μbar,31 kHz),resonant frequency is 39.6 kHz,direction angle is 55°.
出处 《Journal of Semiconductors》 EI CAS CSCD 2013年第7期116-122,共7页 半导体学报(英文版)
基金 Project supported by the National Natural Science Foundation of China(No.61127008)
关键词 MEMS PIEZORESISTIVE ultrasonic sensor ANSYS membrane-beams MEMS piezoresistive ultrasonic sensor ANSYS membrane-beams
  • 相关文献

参考文献4

二级参考文献70

  • 1郝震宏,汤亮,乔东海,汪承灏.硅微压电超声换能器的设计与制作[J].传感技术学报,2006,19(05B):2272-2275. 被引量:2
  • 2[1]Yazdi N,Ayazi F,Najafi K.Micromachined inertial sensors[J].Proc IEEE,1998,86:164021659.
  • 3[2]Bao Min-Hang.Micro mechanical Transducers:Pressure sensors,Accelerometers and Gyroscopes[M].Amsterdam:Elsevier,2000:281-285.
  • 4[3]Chau K,Lewis S R,Zhao Y,et al.An integrated force balanced capacitive accelerometer for low-g applications[J].Sensors and Actuators A:Physical,1996,54 (1/2/3):472-476.
  • 5[4]Suminto J.A wide frequency range,rugged silicon micro accelerometer with over range stops[C] //9th IEEE Int Workshop on Micro Electro Mechanical Systems.San Diego,CA,1996:180-185.
  • 6[5]Huang Shusen,Li Xinxin,Wang Yuelin,et al.A piezoresistive accelerometer with axially stressed tiny beams for both much increased sensitivity and much broadened frequency bandwidth[C]//The 12th International Conference on Solid State Sensors,Actuators and Microsystems.Boston:IEEE.2003:91-94.
  • 7[6]Tschan T,de Rooij N,Bezinge A,et al.Characterizalion and modelling of silicon piezoresistive accelerometers fabricated by a bipolar-compatible process[J] Sensots and Actuators A:Physical,1991,27(1/2/3):605-609.
  • 8[7]Sim J H,Kim D K,Bae Y H,et al.Six-beam piezoresistive accelerometer with self-cancelling cross-axis sensitivity[J].Electron Lett,1998,34(5):497-506.
  • 9[8]Amarsinghe R,Dao D V,Toriyama T,et al.Design and fabrication of miniaturized six-degree of freedom piezoresistive Accelerometer[C]//MEMS 2005 18th IEEE International Conference.Florida,USA,2005:351-354.
  • 10[9]Plaza J A,Dominguez C,Esteve J,et al.BESOI-based integrated optical silicon accelerometer[J].J Microelectromech Syst,2004,13(2):355-364.

共引文献76

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部