摘要
In this paper, the distribution of the phase deviations for the ghosting of Vernier based imagers is provided. The equality of the phase errors is shown. The relationship between the charge noise amplitude of electrodes and the total charge noise amplitude is provided. The relationship between the phase error and the total charge noise amplitude is also provided, which reveals the magnitude of 10 4 electrons for the ghosting occurrence threshold for the 4-coarse-pixel anode imagers.
In this paper, the distribution of the phase deviations for the ghosting of Vernier based imagers is provided. The equality of the phase errors is shown. The relationship between the charge noise amplitude of electrodes and the total charge noise amplitude is provided. The relationship between the phase error and the total charge noise amplitude is also provided, which reveals the magnitude of 104 electrons for the ghosting occurrence threshold for the 4-coarse-pixel anode imagers.
基金
the National Natural Science Foundations of China (Grant Nos. 10878005/A03 and 61007017)
