AlGaN/GaN HEMT微加速度计的设计和温度特性研究

The Design of AlGaN/GaN Based HEMT Micro-accelerometer and Temperature Dependence Characteristics

采用一种新原理来设计AlGaN/GaN HEMT加速度计,从理论和实验两方面分析和验证了温度的变化对加速度计的输出特性带来的影响。测试了AlGaN/GaN基HEMT器件在常温下的Ⅰ-Ⅴ特性和在不同温度下输出特性的变化。结果表明,随着温度的升高,器件的饱和电流减小。根据计算速率约为0.027 mA/℃。加速度计可以在-50℃—50℃的温度安全稳定的工作。

A novel way is used to design AlGaN/GaN based HEMT micro-accelerometer.Analysis and validation the impact are changed in the temperature of the output characteristics of the HEMT devices,both from the theoretical and experimental.Report I-V characteristics and research the output characteristics of AlGaN/GaN HEMT affecte by the changes of temperature.It is shown that saturation current of HEMT would decrease with the increasing temperature,which is about 0.027 mA/℃.However,the accelerometer can work well at the temperature range of -50 ℃ to 50 ℃.