ZnO∶Al替代ITO作透明导电膜的应用

Applications of ZnO∶Al Substitute ITO for Transparent Conductive Layer

研究了AZO(ZnO∶Al)替代ITO透明导电膜在GaN基LED中的应用,通过脉冲激光沉积和磁控溅射法制作了AZO薄膜,分析了AZO与p型GaN不良的欧姆接触的物理机理,并利用插入ITO薄层来改善接触电阻,实验用ITO 20nm/AZO 500nm的复合导电薄膜做透明导电薄膜,成功得到了波长为525.74nm、亮度为380.88mcd、电压为3.35V的GaN基绿光LED芯片,相当于单一ITO透明导电膜的性能,整个试验工艺中减少了ITO的使用量,降低了LED芯片的制造成本。

The applications of ZnO∶Al substitute ITO for transparent conductive layer in GaN-based LED were researched.AZO films were prepared by pulsed laser deposition and magnetron sputtering.Then the physical mechanism of poor ohmic contacts between AZO and p-type GaN layer was analyzed,and the contact resistance was improved by inserting ITO layer simultaneously.For the experiments,ITO 20 nm/AZO 500 nm composite transparent conductive layer was prepared successfully,and the GaN-based green LED was obtained with the brightness of 380.88 mcd,wavelength of 525.74 nm and voltage of 3.35 V.The result is equivalent to the performance of a single ITO transparent conductive layer,and it reduces the usage of ITO and the process cost.