摘要
We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 106. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 gA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel arra36 the yield of functioning transistors is dramatically increased and device- to-device variability is reduced compared to single devices. This new nanowire- based platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes （LEDs）, while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.
我们由对有能力的自底向上的成年的硅 nanowires 的一个平行数组组成的现在的新奇 Schottky 障碍领域效果晶体管交付高当前的产量。nanowires 的轴的 silicidation 被用来创造导致多达 106 的开／关水流比率的定义 Schottky 连接。设备概念利用 nanoscale 连接的唯一的运输性质为宏观的应用程序增加设备性能。用平行数组，在 0.5 V 的来源排水管电压的超过 500 A 的在水流上能被完成。当维持单个 nanowire 设备的转移特征时，跨导因此显著地被增加。由把几百 nanowires 合并到平行数组，工作晶体管的收益戏剧性地被增加， deviceto 设备可变性与单个设备相比被减少。这个新 nanowirebased 平台提供足够的当前的输出为器官的轻射出的二极管(LEDs ) 为生物传感器或一个开车阶段作为一个变换器被采用，当制造过程的自底向上的性质意味着它能为新奇可印刷的电子设备提供积木时。
