BaTiO_3/p-Si异质结的整流特性和光诱导特性的研究

Rectifying behavior and photocarrier injection effect in BaTiO_3 /p-Si heterostructure

利用脉冲激光沉积法成功制备了BaTiO3/p-Si异质结,该异质结在80—300K显示出了良好的整流特性和光诱导特性.开启电压随着温度的升高而逐渐降低.利用不同频率的光子辐照样品,观察到明显的光电导效应.且随着照射光子能量的增大,结电流也相应变大,光诱导效应越明显.BaTiO3薄膜电阻-温度(R-T)曲线显示氧缺陷条件下BaTiO3薄膜具有良好的半导体特性.

A good rectifying behavior is observed in a temperature range from 80 K to 300 K in the BaTiO3 /p-Si heterostructure, which is fabricated by a pulse laser deposition. The diffusion voltage （VD ） decreases with the increase of temperature. A significant photocarrier injection effect is also observed with light irradiation. The photocarrier injection effect increases with the energy of photon increasing. Meanwhile, R-T curve of the BaTiO3 film indicates that the oxygen-deficient BaTiO 3 is an n-type semiconductor.