摘要
以等摩尔分数的Al元素替代(In2Te3)0.09(SnTe)0.91中的In元素,利用放电等离子烧结技术、采用相同的工艺制备了(In2Te3)0.09(SnTe)0.91和(In1.9Al0.1Te3)0.09(SnTe)0.912种化合物,并对两者的微观结构和热电性能进行对比。结果表明,掺杂Al元素后,材料的Seebeck系数降低很小,电导率为1×1052.3×1051·m1,是掺杂前的2.43倍,晶格热导率L值大幅度降低。在693K时,掺杂Al后的化合物ZT值达到最大值0.4,是同温度下掺杂前ZT值的2倍。
Al element was substituted for In in the （In2Te3）0.09（SnTe）0.91 compound with the same molar fraction and （In2Te3）0.09（SnTe）0.91 and （In1.9Al0.1Te3）0.09（SnTe）0.91 compounds were prepared by spark plasma sintering. The microstructure and the thermoelectric property of the compounds were investigated. Results show that although the Seebeck coefficient of the sample is almost unchanged after Al doping, the electrical conductivity increases to 1×10 5Ω-1 ·m -1 at 321 K and to 2.3×10 5 Ω-1 ·m -1 at 705 K, being at least 2.4 3 times that of Al free （In2Te3）0.09（SnTe）0.91 compound, and the lattice thermal conductivity is significantly decreased. The highest ZT value of 0.4 is obtained at 693 K, which is approximately 2 times as large as that of the Al-free （In2Te3）0.09（SnTe）0.91 compound at the same temperature.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2013年第6期1231-1235,共5页
Rare Metal Materials and Engineering
基金
国家自然科学基金(50871056)
