摘要
Mg of Gap doping characteristics in MOCVD have been studied by using SIMS (Secondary Ion Mass Spectrometry) measurement. The experimental results show that the Mg incorporation is considered to be limited by Mg revaporization from the growth surface under the higher temperature and the Mg electrical activity decreases with increasing cP2Mg flow-rate. The activation energy of Mg in GaP is also respectively obtained.
Mg of Gap doping characteristics in MOCVD have been studied by using SIMS (Secondary Ion Mass Spectrometry) measurement. The experimental results show that the Mg incorporation is considered to be limited by Mg revaporization from the growth surface under the higher temperature and the Mg electrical activity decreases with increasing cP2Mg flow-rate. The activation energy of Mg in GaP is also respectively obtained.
出处
《质谱学报》
EI
CAS
CSCD
2000年第3期133-134,共2页
Journal of Chinese Mass Spectrometry Society
