3d过渡金属掺杂TiO_2纳米晶膜电极的光电化学研究

Photoelectrochemical Behavior of 3 d Transition Metal Nanostructured film Electrode Doped with TiO_2

应用原子力显微镜和X射线粉末法对 3d过渡金属离子Cr(Ⅲ ) ,Fe(Ⅲ ) ,Mn(Ⅱ ) ,Co(Ⅱ ) ,Ni(Ⅱ ) ,Cu(Ⅱ )和Zn(Ⅱ )掺杂TiO2 纳米晶粒 (简写为M3d TiO2 )作了表征 ,并用光电化学方法研究了M3d TiO2 纳米结构多孔膜电极 .实验结果表明 ,M3d TiO2 纳米粒子的颗粒较均匀 ,粒径约为 1 5nm ,其晶型为锐钛矿和板钛矿的混晶 .在所研究的M3d TiO2 中 ,只有Zn2 + TiO2 电极的光电流大于未掺杂的TiO2 纳米结构多孔膜电极 .3d金属离子的掺杂引起各电极的光电流信号在一定波长范围内出现 p

The 3 d transition metal ions [Cr(Ⅲ), Fe(Ⅲ), Mn(Ⅱ), Co(Ⅱ), Ni(Ⅱ), Cu(Ⅱ), Zn(Ⅱ)] nanocrystalline doped with TiO 2(abbr. M 3 d TiO 2) were characterized by AFM and XRD. The M 3 d TiO 2 nanostructured film electroede was prepared and investigated with photoelectrochemical techniques. The results show that the size of M 3 d TiO 2 nanocrystalline particles was quite uniform and the radii were about 15 nm. The M 3 d TiO 2 nanocrystalline particles were a mixture of brookite and anatase crystal forms. Of all the M 3 d TiO 2 investigated in this paper, however, the photocurrent intensity of Zn 2+ TiO 2 nanostructured film electode was higher than that of the electrode undoped with TiO 2. The phenomenon of p n type inversion was observed in certain wavelength range, which was caused by 3 d transition ions doping. [WT5HZ]