~4He和^(12)C离子Rutherford背散射的Geant4模拟

Geant4-Based Simulation of ~4He and ^(12)C Ions Rutherford Backscattering on Thin Films

利用Geant4程序模拟270,500keV4 He和12 C离子垂直入射Au,Ag,Cu薄膜上的Rutherford背散射谱(RBS),并讨论材料、厚度和入射离子能量对背散射谱的影响.结果表明,能量较大的12C离子具有较好的质量分辨率.

The Rutherford backscattering spectra（RBS） of 4He and 12C normally incident on Au,Ag,Cu thin films at 270 keV and 500 keV were simulated via Geant4.Effects of different materials,thickness and energy of incident ions on RBS were discussed.The characters of 4He,12C RBS were analyzed.It was found that the mass resolution is much better for 12C RBS than that for 4He RBS.