集成式垂直多结太阳电池的设计与实现

The Design and Realization of Integrated Vertical Multijunction Solar Cell

利用高速热迁移掺杂工艺制成垂直多结 PN结阵列 ,同时扩散短路区在阵列的一端连接所有的 P区 ,形成一个单元电池 ,对大片不分割单元电池 ,只加宽金属线条将相邻单元电池的正负极短路形成欧姆接触 ,这样的单元电池的连接就是集成电池。这样的器件有两个光照面 ,电极对光的遮蔽面积非常小。

The high speed doping thermomigration technique is used to make vertical multijunction array, while the short zone is diffused at an end of PN junction array that connectes all of P zones and forms a unit solar cell. For the big silicon wafer only the width of metal bars is increased that connectes the positive and negative poles of the cell to form the ohm connection. By this method the integrated solar cell is made, and the device has two surfaces for the incident light. The shaded area of the electrical poles are very small.