期刊文献+

基于建模与优化的MOCVD温度均匀控制 被引量:1

Temperature Uniformity Control in MOCVD based on Modeling and Optimization
下载PDF
导出
摘要 为了提高MOCVD反应室衬底温度均匀性,提出一种基于建模和优化的控制策略。采用神经网络建立反应室温度特性模型,得到输入功率与反应室衬底温度场之间的关系,在此基础上,以温度均匀性为性能指标,采用仿生优化算法对输入功率配比进行优化,实现MOCVD反应室衬底温度的均匀控制。仿真结果验证了所提出方法的有效性。 A modeling and optimization based control scheme is proposed to improve the wafer temperature uniformity in MOCVD reactor chamber.A neural network based temperature model is established by modeling the relation between the heating power and the corresponding wafer temperature.Taking the temperature uniformity as the performance index,the heating power ratio is optimized by employing the bionic optimization algorithm and the obtained temperature model.The temperature uniformity control is thus performed in real time by constantly modifying the heating power ratio.Experiments results are presented to show the effectiveness of the proposed scheme.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2013年第6期1175-1180,共6页 Journal of Synthetic Crystals
关键词 MOCVD 温度均匀性控制 建模 仿生优化 MOCVD temperature uniformity control modeling bionic optimization
  • 相关文献

参考文献11

  • 1于海群,左然,陈景升.一种多喷淋头式MOCVD反应器的设计与数值模拟[J].人工晶体学报,2011,40(4):1065-1070. 被引量:3
  • 2徐谦,左然,张红.反向流动垂直喷淋式MOCVD反应器设计与数值模拟[J].人工晶体学报,2005,34(6):1059-1064. 被引量:13
  • 3李志明,郝跃,张进成,陈炽,薛军帅,常永明,许晟瑞,毕志伟.立式MOCVD反应室中一种刻槽基座的热分析[J].人工晶体学报,2010,39(4):1072-1077. 被引量:2
  • 4Hanawa H, Maung K J. Brown K. Multi-Zone Induction: Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers[ P]. US Patent App. US 2011/0259879 A1, 2011-10-27.
  • 5Charles D S, Thomas K, Yong J L. Decentralized Control of Wafer Temperature for Multizone Rapid Thermal Processing System[ J ]. IEEE Trans. on Semiconductor Manufacturing,1999 , 12(2) 193-199.
  • 6过润秋,解宝辉.基于Fuzzy-PID的MOCVD温度控制方法[J].西安电子科技大学学报,2005,32(4):504-507. 被引量:9
  • 7Ken I F. On the Approximate Realization of Continuous Mappings by Neural Networks[J]. Neural Networks,1989,1:183-192.
  • 8Daniel S L. Neural Network Modeling[ M]. Stevens Handbook of Experimental Psychology. Vol. 4, John Wiley & Sons. Inc, 2002: 223.
  • 9Eberhart R C, Kennedy J. A new optimizer using particle swarm theory. Proc. 6th Intl. Syrup. on Micro Machine and Human Science [ C ]. Nagoya, Japan , IEEE 1995, 39-43.
  • 10Sift Y H, Eberhart R C. A Modified Particle Swarm Optimizer.Proc. of the IEEE CEC [ C ], 1998, 69-73.

二级参考文献31

  • 1蒲红斌,陈治明,李留臣,封先锋,张群社,沃立民,黄媛媛.用热壁CVD法在SiC衬底上生长SiCGe合金的热场分析与设计[J].人工晶体学报,2004,33(5):712-716. 被引量:4
  • 2徐谦,左然,张红.反向流动垂直喷淋式MOCVD反应器设计与数值模拟[J].人工晶体学报,2005,34(6):1059-1064. 被引量:13
  • 3张群社,陈治明,李留臣,蒲红斌,封先锋,陈曦.不同耦合间隙对大直径SiC晶体生长感应加热系统的影响[J].人工晶体学报,2006,35(4):781-784. 被引量:4
  • 4徐谦,左然.反向流动垂直喷淋式MOCVD反应器生长GaN的化学反应数值模拟[J].人工晶体学报,2007,36(2):338-343. 被引量:6
  • 5Hitchman M L, Jensen K F. Chemical Vapor Deposition [ M ]. Academic Press, 1993.
  • 6Fotiadis D I, Kieda S, Jensen K F. Transport Phenomena in Vertical Reactors for Metalorganic Vapor Phase Epitaxy: Effects of Heat Transfer Characteristics, Reactor Geometry and Operating Conditions [ J ]. Journal of Crystal Growth, 1990,102 ( 3 ) :441-470.
  • 7Weyburne D W, Ahem B S. Design and Operating Considerations for A Water-cooled Close-spaced Reactant Injector in A Production Scale MOCVD Reactor[ J ]. Journal of Crystal Growth, 1997,170 ( 1-4 ) :77-82.
  • 8Guo Y, Pitts O J, Jiang W Y, et al. Numerical Optimization of an Optical Showerhead Reactor Design for Organometallic Vapor Phase Epitaxy [ J ]. Journal of Crystal Growth,2006,297 ( 2 ) : 345-351.
  • 9Theodoropoulos C, Mountziaris T J, Moffat H K, et al. Design of Gas Inlets for the Growth of Gallium Nitride by Metalorganic Vapor Phase Epitaxy [ J]. Journal of Crystal Growth ,2000,217 ( 1-2 ) :65-81.
  • 10Cho W K, Choi D H, Optimization of a Horizontal MOCVD Reactor for Uniform Epitaxial Layer Growth[J]. International Journal of Heat and Mass Transfer,2000,43(10) :1851-1858.

共引文献22

同被引文献10

引证文献1

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部