摘要
A 10-bit single-slope analog-to-digital converter (ADC) for time-delay-integration CMOS image sensor was proposed. A programmable ramp generator was applied to accomplish the error calibration and improve the linearity. The ADC was fabricated in a 180 nm 1P4M CMOS process. Experimental results indicate that the differential nonlinearity and integral nonlinearity were 0.51/-0.53 LSB and 0.63/-0.71 LSB, respectively. The sampling rate of the ADC was 32 kHz.
A 10-bit single-slope analog-to-digital converter (ADC) for time-delay-integration CMOS image sensor was proposed. A programmable ramp generator was applied to accomplish the error calibration and improve the linear- ity. The ADC was fabricated in a 180 nm 1P4M CMOS process. Experimental results indicate that the differential nonlinearity and integral nonlinearity were 0.51/-0.53 LSB and 0.63/-0.71 LSB, respectively. The sampling rate of the ADC was 32 kHz.
基金
Supported by National Natural Science Foundation of China (No. 61036004 and No. 61076024)