摘要
采用GaAs pin工艺设计和制作了毫米波超宽带大功率单刀双掷开关单片集成电路。在GaAs pin二极管建模阶段充分考虑寄生效应对模型的影响,获得高精度模型;在电路设计阶段采用GaAs pin二极管单级并联结构,提高功率特性;在工艺加工阶段调整p+层、n+层的掺杂浓度和i层的厚度,获得低损耗、高功率特性的GaAs pin二极管;最终制备的单刀双掷开关芯片在片测试表明,在25~40 GHz范围内插入损耗小于1.0 dB,隔离度大于25 dB,输入输出电压驻波比小于2.0∶1,具有优异的宽带小信号特性;35 GHz下承受功率高达34 dBm,具有非常好的功率特性。
A millimeter-wave ultra wideband and high power monolithic single pole double throw (SPDT) switch was designed and fabricated using GaAs positive intrinsicnegative (pin) diode process. The impact of parasitic parameters was fully considered in order to obtain high-precision model of GaAs pin diode. A parallel single-stage structure which can improve the power handling capability was applied for designing the monolithic switch. The thickness of i layer and the doping concentration of p^+ and n ^+ layer were adjusted during the processing stage, a low insertion loss and high-power capacity GaAs pin diode was obtained. Through these methods an excellent wide-band performance of SPDT switch was produced. From 25 GHz to 40 GHz operating bandwidth for on-chip measurement the insertion loss of the switch is less than 1.0 dB, the isolation is more than 25 dB, the input VSWR and output VSWR is less than 2.0:1, the SPDT switch has excellent wideband small signal characeristics. The switch also has the good capability of power handling which achieves 34 dBm (continuous wave) at 35 GHz.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第8期581-584,共4页
Semiconductor Technology