摘要
介绍了一款采用四级级联结构的高增益宽带Ku波段中功率放大器单片集成电路,依据电路原理和放大器性能指标设计了电路原理图,利用ADS软件对电路图进行了电学参数优化、电磁场仿真和版图绘制。针对放大器工作频带宽和增益高,容易产生自激振荡等问题,设计过程中特别考虑了放大器的稳定性和增益平坦度。采用0.25μm栅长的GaAs PHEMT工艺完成了芯片制造,微波性能测试结果表明,在12～18 GHz内,该放大器输出功率大于27 dBm,功率增益大于27 dB,输入回波损耗大于12 dB。
A high-gain, broadband Ku-band medium power amplifier monolithic integrated circuit with a four cascade structure was introduced. The circuit schematic was designed based on the circuit theory and amplifier performance indicators. The electrical parameters of the amplifier were optimized, the electromagnetic simulation was carried out and the circuit layout was drawn with ADS software. Due to the broadband frequency and high gain of amplifier prone to self-excited oscillation, the stability of the amplifier and the gain flatness problem were specially considered when the circuit was designed. The power amplifier was fabricated using GaAs PHEMT 0.25 ~m gate length technology. The test results of microwave characteristics show that the output power is more than 27 dBm, the power gain is more than 27 dB, and the input return loss is more than 12 dB with operation frequency from 12 GHz to 18 GHz.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第8期585-588,共4页
Semiconductor Technology
