摘要
由于新型高压场终止型绝缘栅双极晶体管(FS-CIGBT)器件结构与普通IGBT器件结构相比,增加了一层p阱及n阱的结构,因此会产生电势的自钳位效应,保护器件正面结构,防止出现高压失效现象,提高器件的可靠性,同时会降低器件的正向导通压降以及开关损耗。鉴于新结构器件的优势,借助仿真软件Sentaurus TCAD,设计了新型FS-CIGBT器件的各项结构参数以及工艺制造流程,并仿真模拟了其各项电学特性参数。仿真得到FS-CIGBT的击穿电压为8 129 V,在额定电流密度25 A/cm2条件下,导通压降为3.6 V,器件关断损耗为103 mJ/cm2,且各项特性参数均优于普通结构的IGBT器件的特性。
The field stop clustered insulated gate bipolar transistor （ FS-CIGBT ） is a novel high voltage device, which has an extra p well and n well layer in contrast to the ordinary IGBT. The extra p well and n well will induce the self-clamped effect in the structure, which can protect the front structure in the high voltage mode and improve the reliability of the device. At the same time, the loss of on-state and turn-off is smaller. All kinds of parameters of the FS-CIGBT and the technology process to fabricate the device were designed with the help of Sentaurus TCAD simulation software. Then the electrical properties of FS-CIGBT are simulated, whose breakdown voltage is 8 129 V, on-state voltage is 3.6 V at 25 A/cm^2 , loss of turn-off is 103 mJ/cm^2. These are better than those of the IGBT.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第8期593-597,共5页
Semiconductor Technology
基金
国家科技重大专项(2011ZX02504-002)
