FeS_2薄膜的制备和性能

PREPARATION AND PROPERTIES OF THIN PYRITE FILMS

研究了不同热硫化条件下用纯Ｆｅ膜反应形成的ＦｅＳ２多晶薄膜成分、结晶形态和电阻率的变化规律，结果表明，在４００℃等温２０～３０ｈ时，生成的ＦｅＳ２比较充分，薄膜中的Ｆｅ，Ｓ含量接近ＦｅＳ２计量成分，随硫化温度升高，ＦｅＳ２晶粒明显增大，电阻率显著上升，当在４００℃硫化充分形成ＦｅＳ２晶粒后，继续延长等温时间对组织形态无明显影响。

Polycrystalline FeS2 thin films were prepared by thermally sulfurating iron layers sputtered on glass substrates. The effects of sulfidation temperature and time on composition, crystalline morphology and resistivity have been investigated under 80 kPa sulfur pressure. Test results shown that there was a nearly complete crystallization from iron into polycrystalline FeS2 under annealing 20-30h at 400℃. As a result of the sulfidation conditions above, the films could have approximate FeS2 stoichiometrical composition and display a uniform microstructure. With the elevation of sulfidation temperature, the grain size of FeS2 crystalline and the resistivity of film samples increased significantly. There was an insignificant effect of sulfidation time on crystalline morphology at 400℃ when FeS2 grains formed fully.