摘要
用溶胶－凝胶法在 Ｐｔ／Ｔｉ／ＳｉＯ２／Ｓｉ（１００）基片上制备了近等原子比的压电 ＰＺＴ薄膜在准同型相界附近的ＰＺＴ薄膜的应变机制是受极化控制的压电效应、内电场导致薄膜的自发极化定向，使薄膜未经极化就具有明显的压电响应。
The PZT thin films with content ratio 53:47 of Zr to Ti were deposited on Pt / Ti/Sio2 / Si(100) substrates by using sol-gel techniques in this paper. The strain mechanism of PZT thin films with the composition near the morphotrophic phase boundary is caused by piezoelectric response controlled by polarization. Spontaneous polarization arraying in preferred orientation under internal bias fields contributed the piezoelectric response of as-grown PZT thin films.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
2000年第4期397-400,共4页
Chinese Journal of Materials Research
基金
国家自然科学基金!59782009
上海市教委青年基金!98QN55
上海交通大学国家教育部薄膜与微细加工重点研究实验室基金
