摘要
采用铟锡合金作为溅射源，通过直流反应磁控溅射和在大气环境下高温退火，制备出了性能优良的ＩＴＯ薄膜，其太阳光谱透射率大于９０％。在放电参数、工作气体压力、反应气体流量、沉积时间等工艺参数相同的条件下，研究了退火温度对薄膜表面形貌、化学成分、晶体结构、光学和电学性能的影响。
ITO thin film with solar transmittance beyond 90% is obtained by the magnetron sputtering and annealed in the atmosphere environment. With the same parameters of discharge, working gas pressure, the now of reactive gas and deposition time etc., the influence of the annealing temperature on the appearance of film surfaces, chemical compositions, crystal structures, optical and electric properties is studied.
出处
《真空与低温》
2000年第3期152-155,183,共5页
Vacuum and Cryogenics
关键词
光学特性
电学特性
铟锡合金薄膜
结构
退火温度
ITO
transparent conductive thin film
optical property
electric properly
