ZnO:Al透明导电膜的制备及其性能的研究

Investigation on Characters and Preparation of ZnO:Al Thin Film

利用脉冲激光法制备了 Zn O:Al透明导电膜。通过对膜进行霍尔系数测量及SEM、XRD测试分析 ,详细研究了靶材中的化学配比 (掺杂比 )对膜的透光率和电阻率的影响。结果表明 :掺杂比、氧分压强影响着膜的电学、光学性能和膜的结晶状况。从电学分析看出 :掺杂比从0 .75%增至 1 .5%过程中 ,膜的载流子浓度、透光率 (在波长大于 50 0 nm的范围 )和光隙能相应增大。在氧分压强为 0 Pa(不充氧 )、掺杂比为 1 .5%左右时沉积的膜 ,其电阻率达到最小 ,其值为 7.1× 1 0 -4 Ω cm,且在可见光区其透光率超过了 90 %。

In this paper, the effects of oxygen pressure and dopant ratio on the resistivity and optical transmittance of ZnO:Al films by pulsed laser deposition have been investigated. The properties of the films have been analysed through Hall effect and X\|ray diffraction.From electrcal and optical analysis we found that the carrier concentration, optical transmittance and optical energy gap increased when the dopant ratio was raised from 0\^75% to 1\^5%.The film prepared at 300℃ using a target of dopant ratio of 1\^5% has a low resistivity of 7\^1×10 -4 Ωcm, and a transmittance of about 90% in the visible range.