摘要
在氧气、氩气的混合气氛中 ,利用反应射频磁控溅射制备了厚度在 1 0 0到 1 0纳米的非晶氧化铝薄膜。通过 Al-Al2 O3 -Al电容器研究了此非晶薄膜的介电性质。
Amorphous alumina thin films with thickness from 100 to 10 nm are fabricated by reactive RF magnetron sputtering in a O\-2 and Ar mixture. And its dielectric characteristics are studied on the base of Al\|Al\-2O\-3\|Al capactiors.
出处
《材料科学与工程》
CSCD
2000年第3期80-83,共4页
Materials Science and Engineering
关键词
反应射频磁控溅射
介电性质
非晶
氧化铝薄膜
Reactive RF magnetron sputtering
dielectric characteristics
amorphous
alumina film.
