SiC材料氧化行为研究进展

Status of Studies on the Oxidation of Silicon Carbide

本文对各种纯 Si C及含有少量杂质的 Si C在不同条件下的氧化行为进行了全面系统的概述。对今后 Si C氧化行为的研究具有一定的指导意义。

Development of the studies on the oxidation of purified and contaminated Silicon Carbide under different oxidation conditions was systematically summarized in this paper.It will benefit the further research on the oxidation behavior of silicon carbide.\;