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平行耦合四量子点体系自旋相关的Fano效应

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摘要 研究了平行耦合四量子点体系的自旋相关的Fano效应。量子点1、3和量子点2、4之间的耦合强度取定值,当量子点1、2之间的耦合强度很小时,对其输运性质基本不产生影响。量子点1、2间的耦合强度增大时,多通道间的量子相干会导致电导谱中出现Fano峰。
作者 王晓飞
出处 《黑龙江科技信息》 2013年第18期142-142,共1页 Heilongjiang Science and Technology Information
关键词 量子点 Fano效应
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