退火对掺钒半绝缘4H-SiC晶片质量影响的研究

Influence of Annealing Process on Quality of Vanadium-doped Semi-insulating 4H-SiC Wafer

通过物理气相传输(PVT)法成功地生长出直径大于7.62 cm的掺钒半绝缘4H-SiC晶体。抛光后的掺钒半绝缘4H-SiC晶片在真空且温度1 600℃～2 000℃条件下进行退火处理,利用高分辨X-ray衍射仪、显微拉曼光谱仪、非接触电阻率测试仪和应力仪对退火前后的晶片进行了测试与分析,研究了退火工艺对掺钒半绝缘4H-SiC晶片应力的影响,并且得到了合适的退火工艺。结果表明:合适的退火处理有利于进一步提高晶片的质量。

7.62 cm vanadium-doped semi-insulating（DVSI） 4H-SiC single crystal is prepared successfully by physical vapor transport（PVT） method.The wafes of 4H-SiC crystal were annealed at the temperature ranges between 1 600 ℃and 2 000 ℃.After annealing,COREMA（Contactless Resistivity Mapping）,HR-XRD（High resolution X-ray diffraction） and MRSM（Microscope Raman Spectra Mapping） tests are carried out,with annealing treatment,it implies that other growth defects such as polytype inclusions,stress and micropipes will be reduced following the annealing and 4H-SiC crystalline quality will be improved.