摘要
采用传统陶瓷工艺制备MgZn软磁铁氧体材料,分析了Cu、Mn替代以及微量掺杂对材料性能的影响。实验结果表明适量Cu、Mn取代Mg可提高材料的分子磁矩,从而提高饱和磁化强度,同时增强超交换作用,通过微量Bi2O3、V2O5掺杂可改善材料显微结构,减少材料气孔,提高致密性,使材料具有高饱和磁通密度Bs、高磁导率μi、高居里温度TC、高绝缘电阻ρ等优良性能,并使材料具有良好的直流叠加特性,从而满足大功率电感元件的性能要求。实验表明Mg0.21Mn0.12Cu0.15Zn0.52Fe2O4为主配方添加0.2%Bi2O3、0.1%V2O5材料性能最好。
Using high purity raw material, MgZn ferrites were prepared by solid-state reaction method, and the effects of Cu and Mn substitution and trace element doping on the electromagnetic properties were investigated. It was found that proper content of Cu, Mn substation for Mn can increase the molecular magnetic moment, and resultantly the saturation magnetization. Trace doping of Bi2O3 and V2O5 can greatly increase permeability, saturation flux density, initial permeability, Curie temperature, insulation resistance and better DC-bias superposition as a result of microstructure improving, porosity reducing and density increasing. The optimun property is obtained for Mg0.21Mn0.12Cu0.15Zn0.52Fe2O4 with trace doping of 0.2% Bi2O3 and 0.1% V2O5.
出处
《磁性材料及器件》
北大核心
2013年第4期64-66,73,共4页
Journal of Magnetic Materials and Devices
关键词
MgZn软磁铁氧体
取代
掺杂
饱和磁通密度
直流叠加
MgZn soft ferdte
substitution
doping
saturation magnetic induction
DC-bias superposition