摘要
提出了一种薄膜晶体管的新结构。这种新结构充分发挥了短沟道效应和多结效应的优点。通过器件模拟,验证了此种器件结构的物理机制。通过应用这种新结构,薄膜晶体管的阈值电压、伪亚阈值斜率、开关电流比和场效应迁移率都大幅改善,并且器件的热载流子和自加热可靠性也得到了极大的改善。
A new structure for thin-film transistors is proposed and demonstrated, exhibiting the benefits but not the drawbacks of both short-channel and multi-junction effects. Simula- tions are performed to verify the physics of this device structure. All characteristics such as threshold voltage, pseudo subthreshold slope, on-off current ratio and field-effect mobility are improved. Furthermore, device hot carrier and self-heating reliability are also improved by this new structure.
出处
《液晶与显示》
CAS
CSCD
北大核心
2013年第4期471-478,共8页
Chinese Journal of Liquid Crystals and Displays
基金
香港研究资助局主题研究计划项目(No.T23-713/11-1)
关键词
搭桥晶粒
多晶硅
薄膜晶体管
bridged-grain
polycrystalline silicon
thin-film transistors