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H_2气氛退火处理温度对磁控溅射ZnO薄膜光电性能的影响

Influence of hydrogen annealing temperature on the optical and electrical properties of ZnO thin films prepared by magnetron sputtering
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摘要 在室温下,采用直流磁控溅射法,以载玻片作为衬底,淀积出ZnO薄膜。在常压H2气氛中,以不同温度对样品进行退火处理。结果表明,在退火温度为500℃时,样品具有最佳综合光电性能,其在360～960nm波长范围内的平均透光率为76.35%,方块电阻为6.3kΩ/□。 In this paper,ZnO thin films were prepared on glass slide substrates using DC magnetron sputtering method at room temperature.The samples were annealed atmospheric pressure of hydrogen gas under different temperatures.The results indicated that the sample obtained under 500℃ had optimum optical and electrical performance.Its whole average transmittance in the wavelength range of 360-960nm was 76.35%,and the sheet resistance was 6.3kΩ/□.
作者 马明 高传玉 周明 李保家 李浩华
机构地区 江苏大学机械工程学院 江苏大学材料科学与工程学院 江苏大学江苏省光子制造科学技术中心重点实验室
出处 《功能材料》 EI CAS CSCD 北大核心 2013年第15期2268-2270,2275,共4页 Journal of Functional Materials
基金 国家自然科学基金资助项目(50975128 50975129) 国家重点基础研究发展计划(973计划)资助项目(2011CB013000) 江苏高校优势学科建设工程资助项目(1033000002)
关键词 ZNO薄膜 退火温度 透光率 方块电阻 ZnO thin films annealing temperature transmittance sheet resistance
分类号 TK513.2 [动力工程及工程热物理—热能工程]
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参考文献23

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