MEMS薄膜塞贝克系数的测试结构研究进展

Research Development of Test Structures for Seebeck Coefficient of MEMS Thin Films

综述了微电子机械系统(MEMS)薄膜塞贝克系数的测试结构。首先介绍了塞贝克效应在MEMS领域的广泛应用,简述了测试MEMS薄膜塞贝克系数的目的和意义。然后详细列举了四类典型的MEMS薄膜塞贝克系数的测试结构,包括平面结构、纵向结构、微电子机械结构和纳米结构,并从测试结构的制作工艺、测量的准确性和精确度等方面对四类测试结构的优劣和适用范围进行了分析,给出了测试结构优化的建议。最后,介绍了针对测试结构存在的问题所开展的研究及取得的进展,展望了MEMS薄膜塞贝克系数测试结构的发展前景,指出了在线测试结构将推动MEMS薄膜测试技术的进一步发展。

The test structures for Seebeck coefficient of micro-electromechanical systems （MEMS） thin films are reviewed. Firstly, the widespread applications of Seebeck effect in the field of MEMS are introduced, and the purpose and significance of measuring Seebeck coefficient of MEMS thin films are briefly described. Then, four typical types of test structures for Seebeck coefficient of MEMS thin films are enumerated in detail, including the planar structure, vertical structure, micro-eleetromechanical structure and nano structure. From the aspects of the manu- facturing process, measuring accuracy and precision, the advantages, disadvantages and the ap- plication fields of these test structures are analyzed, and some recommendations for optimizing the test structures are presented. At last, the research and progress for the existing problems of test structures are introduced, and the development of the test structures for Seebeck coefficient of MEMS thin films is prospected, it is pointed out that the in-situ testing will play an important role in the development of testing technology of MEMS thin films.