摘要
We give a brief introduction to the oxide （ZnO, TiO2, In2O3, SnO2, etc.）-based magnetic semiconductors from fundamental material aspects through fascinating magnetic, transport, and optical properties, particularly at room temperature, to promising device applications. The origin of the observed ferromagnetism is also discussed, with a special focus on first-principles investigations of the exchange interactions between transition metal dopants in oxide-based magnetic semiconductors.
We give a brief introduction to the oxide （ZnO, TiO2, In2O3, SnO2, etc.）-based magnetic semiconductors from fundamental material aspects through fascinating magnetic, transport, and optical properties, particularly at room temperature, to promising device applications. The origin of the observed ferromagnetism is also discussed, with a special focus on first-principles investigations of the exchange interactions between transition metal dopants in oxide-based magnetic semiconductors.
基金
supported by the National Natural Science Foundation of China(Grant Nos.5125004 and 10974120)
111 Project(Grant No.B13029)
the National Basic Research Program of China(Grant Nos.2013CB922303 and 2009CB929202)
