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Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content 被引量：1

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content
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摘要 The performance of a multiple quantum well （MQW） InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density （Jsc） and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization. The performance of a multiple quantum well （MQW） InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density （Jsc） and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.
作者 赵璧君 陈鑫 任志伟 童金辉 王幸福 李丹伟 卓祥景 章俊 易翰翔 李述体
机构地区 Laboratory of Nanophotonic Functional Materials and Devices
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第8期698-701,共4页 中国物理B（英文版）
基金 supported by the National Natural Science Foundation of China(Grant No.51172079) the Science and Technology Program of Guangdong Province,China(Grant Nos.2010B090400456 and 2010A081002002) the Science and Technology Program of Guangzhou City,China(Grant No.2011J4300018)
关键词 metal-organic chemical vapor deposition GaN-based solar cells InGaN/GaN multiple quantumwells metal-organic chemical vapor deposition, GaN-based solar cells, InGaN/GaN multiple quantumwells
分类号 TN304 [电子电信—物理电子学] TM914.4 [电气工程—电力电子与电力传动]
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同被引文献56

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Chinese Physics B
2013年 第8期

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