摘要
对硅基转接板上单层RDL(redistribution layer)和多层RDL传输线的损耗特性进行了深入的分析和比较。研究了硅的电阻率、传输线几何尺寸(包括线宽,线高和介质厚度等)对传输特性的影响,并总结了硅基上单层RDL和多层RDL传输线的不同传输规律。另外,提出了一种优化的叠层结构和差分信号线结构,大大改善了硅基上互连结构的传输性能。
In this paper, transmission properties of interconnect structures, fabricated on silicon substrate with one RDL（redistribution lalyer） and multi RDL, are deeply investigated and compared. the influence of silicon resistivity and physical size including line width, height of line and dielectric on transmission performance are detailed analyzed. In addition, in order to minimize transmission losses, we analyze the influence of stack up design and type of transmission line. An unconventional stack up design and differential lines structure is proposed that minimizes transmission losses.
出处
《科学技术与工程》
北大核心
2013年第20期5790-5795,共6页
Science Technology and Engineering
关键词
硅基转接板
电阻率
传输线
插入损耗
差分信号线
Silicon interposer
resistivity
transmission lines
insertion loss
differential signal lines
