Melting kinetics of bulk SiC using molecular dynamics simulation

The melting kinetics of bulk SiC is studied by using classical molecular dynamics simulation.The mean square displacement,diffusion coefficient,Lindemann index and non-Gaussian parameter are used to analyze the melt nucleation and macrokinetics in the melting process.Melting occurs when the superheated crystal spontaneously generates many Lindemann particles in which they coalesce together to form melt nucleation inside the crystal.The melting process is similar to the solidification process,but also experiences three processes such as nucleation,growth and relaxation.The melting process can be divided into premelting,accelerated melting and relaxation stages.Using the sectional method can properly reflect the kinetic characteristics of the melting process.