摘要
A rapid and simple approach to fabricate large-area surface-enhanced Raman scattering-active(SERS-active) substrates is reported.The substrates are fabricated by using femtosecond laser(fs-laser) direct writing on Silicon wafers,followed by thin-film coating of metal such as gold.The substrates are demonstrated to exhibit signal homogeneity and good enhancement ability for SERS.The maximum enhancement factor(EF) up to 3×10 7 of such SERS substrates for rhodamine 6G(R6G) at 785 nm excitation wavelength was measured.This technique could demonstrate a functional microchip with SERS capability of signal homogeneity,high sensitivity and chemical stability.
A rapid and simple approach to fabricate large-area surface-enhanced Raman scattering-active（SERS-active） substrates is reported.The substrates are fabricated by using femtosecond laser（fs-laser） direct writing on Silicon wafers,followed by thin-film coating of metal such as gold.The substrates are demonstrated to exhibit signal homogeneity and good enhancement ability for SERS.The maximum enhancement factor（EF） up to 3×10 7 of such SERS substrates for rhodamine 6G（R6G） at 785 nm excitation wavelength was measured.This technique could demonstrate a functional microchip with SERS capability of signal homogeneity,high sensitivity and chemical stability.
基金
supported by the National Natural Science Foundation of China (Grant Nos.51271092 and 11274160)
