1,2,4,5-四{4-[N,N-二(4-碘苯基)氨基]苯乙烯基}苯的聚集诱导发光增强及电存储性质

Aggregation-induced Emission Enhance and Electrical Storage Properties of 1,2,4,5-Tetra{4-[N,N-di(4-iodophenyl)amino]styryl}benzene

通过Wittig-Horner反应合成了1个三苯胺共轭树枝分子1,2,4,5-四{4-[N,N-二(4-碘苯基)氨基]苯乙烯基}苯(TPAB-I).TPAB-I在甲苯、四氢呋喃、乙酸乙酯、二氯甲烷和DMF溶液中的最大荧光发射峰分别位于451,464,478,481和511 nm;其固体粉末和旋涂膜的最大发射波长分别为526和488 nm.实验结果表明,TPAB-I具有明显的聚集诱导发光增强效应.将三苯胺共轭树枝分子TPAB-I用于制作有机电存储器件,制得了三明治夹心结构的Al/TPAB-I/ITO电存储器件.该电存储器ON/OFF状态下电流比接近104,擦除电压为-2.0 V,写入电压为1.5 V,在1.0 V的读取电压下,电存储器在104s内均能保持良好的稳定性,具有较好的电存储性能.

A conjugated dendrimer based triphenylamine, 1,2,4,5-tetra{4-[N,N-di（4-iodophenyl）amino]styryl}benzene（TPAB-I）, was synthesized through Wittig-Horner reaction. The maximum emission wavelengths of TPAB-I were 451, 464, 478, 481 and 511 nm in toluene, THF, ethyl acetate, CH2Cl2 and DMF, respectively. The maximum emission wavelengths of solid and film of TPAB-I were 526 and 488 nm, respectively. Aggregation-induced emission enhancement of TPAB-I had been found. The possible mechanism of this phenomenon was discussed. An organic electrical memory device having the Al/TPAB-I/indium-tin oxide（ITO） sandwich structure was fabricated firstly. The device exhibited a flash memory effect with a high ON/OFF current ratio nearly 104, a long retention time above 104 s and a read voltage 1.0 V. The read voltage and erase voltage were 1.5 and -2.0 V, respectively. The results demonstrated that the synthetic TPAB-I possessed a high potential to become dendrimeric memory device.