p型透明导电氧化物CuCr_(1–x)Mg_xO_2的制备及光电性能研究

Preparation and photoelectric properties of p-type transparent conducting oxides CuCr_(1-x)Mg_xO_2

采用溶胶–凝胶法制备了CuCr1–xMgxO2粉末,压制烧结形成了CuCr1–xMgxO2陶瓷样品,研究了Mg2+掺杂量和压制压强对CuCrO2粉末和陶瓷的相组成、显微结构及光电性能的影响。结果表明:随着Mg2+掺杂量从0.01增加到0.07,所制CuCr1–xMgxO2粉末对紫外–可见光的吸收度增加,光学带隙宽度由3.25 eV逐渐减小到2.86 eV。随着Mg2+掺杂量或压制压强的增加,其相应陶瓷样品的电导率均先增大后减小。当Mg掺杂量x为0.03,压制压强为550 MPa时,制备的CuCr0.97Mg0.03O2陶瓷样品的电导率达到最大值,为19.8 S/cm。

CuCr1–xMgxO2 powders were prepared by sol-gel method,and the CuCr1–xMgxO2 ceramic samples were obtained by pressing and sintering.The effects of Mg2＋doping amount and the pressing pressure on the phase composition,microstructure and photoelectric properties of CuCr1–xMgxO2 powders and ceramic samples were investigated.The results show that with the Mg2＋doping amount increasing from 0.01 to 0.07,the absorbance of the prepared powders to ultra-violet visible light increases,and the optical band-gap decreases gradually from 3.25 eV to 2.86 eV.With the increase of Mg-doping amount or pressing pressure,the conductivity of the prepared ceramic samples firstly increases and then decreases.When the Mg2＋doping amount x is 0.03 and the pressing pressure is 550 MPa respectively,the conductivity of the prepared CuCr0.97Mg0.03O2ceramic sample gets the maximum value of 19.8 S/cm.