LED用SiC衬底的超精密研磨技术现状与发展趋势

Situation and Development Trends of lapping for SiC Substrates for LED

介简单地介绍了发光二极管的发展历程,概述了LED用SiC衬底的超精密研磨技术的最新现状及发展趋势,阐述了研磨技术的原理、应用和优势。同时结合实验室X61 930B2M-6型研磨机,分析了加工工艺参数对研磨表面质量的影响,介绍了当前SiC衬底加工达到的精度水平,即SiC衬底表面粗糙度小于50nm,平面度和翘曲度均小于5,并提出了研磨加工将会向高精度、高效率的方向发展。SiC作为外延的最佳衬底,必将成为研究热点,未来SiC会向大尺寸、更低缺陷水平方向发展。

The development of LED（light-emitting diode）and precision lapping technique are all described.The applications and advantages of precision lapping technique are reviewed here,and the theory of lapping for SiC substrates and influence of technological parameters are discussed,and SiC substrate surface roughness is less than fifty nm,flatness and warpage degrees are less than five.Then the future prospect of precision lapping is of more high precision and efficiency.SiC substrate,as a best epitaxial substrate,will become a hot research topic and reach to a large size and less defect horizontal direction in the future.