摘要
介绍了一款基于砷化镓异质结双极晶体管(GaAs HBT)工艺的24 GHz单片压控振荡器(VCO),VCO芯片上同时集成了1/2次谐波输出及八分频器电路,可提供1/2和1/16次谐波输出。由于振荡器采用了推-推压控振荡器(push-push VCO)结构,相比传统的通过低频VCO芯片和倍频器级联技术实现的24 GHz VCO具有更低的相位噪声,测试结果表明芯片在不同温度、振动以及其他条件下表现出良好的相位噪声,在0～13 V的电调电压条件下输出频率为23～25.5 GHz,输出功率在5 V直流工作电压条件下为9 dBm,相位噪声低至-92 dBc/Hz@100 kHz。同时1/2次谐波输出及八分频器电路提供的1/16次谐波输出性能良好。
The 24 GHz MMIC voltage controlled oscillator （VCO）based on the GaAs heterojunction bipolar transistor （GaAs HBT） technology was introduced. The MMIC VCO integrated 1/2 harmonic output and divided-by-8 high speed prescaler for the 1/2 and 1/16 harmonic output frequency. The design of the VCO used push-push structure, the 24 GHz VCO have lower phase noise compared to the traditional design which used the low frequency VCO chips and frequency multiplier cascade technology. The measured results show that the phase noise is -92 dBc/Hz @ 100 kHz. The VCO can provide frequency from 23 GHz to 25.5 GHz with the tuning voltage from 0 V to 13 V. Output power is 9 dBm with 5 V DC supply. The VCO＇s phase noise performance is excellent over different temperature,shock and other conditions due to the VCO＇s monolithic push-push structure. The 1/2 harmonic and divided-by-8 high speed prescaler for a 1/16 harmonic output frequency also provide excellent performance.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第7期506-509,共4页
Semiconductor Technology
