基于加速退化晶体管贮存寿命的评估

Storage Life Assessment of Transistors Based on Accelerated Degradation

为探求快速评价国产晶体管长期贮存寿命的方法,对国产3DK105B型晶体管开展了加速退化试验的分析和研究。通过三组不同温、湿度恒定应力的加速退化试验,确定了晶体管的失效敏感参数,利用其性能退化数据外推出样品的寿命;给出了常见的三种分布下的平均寿命,并结合Peck温湿度模型外推出自然贮存条件下本批晶体管的贮存寿命。最后分析了试验样品性能参数退化的原因。试验结果可以为评估国产晶体管的贮存可靠性水平提供一定的参考。

An accelerated degradation test （ADT） of the 3DKIOSB transistor was analyzed and studied, in order to explore the rapid evaluation of home-made transistor storage life. By three groups of accelerated degradation tests with differaent temperatures and humidity constant stresses. The failure sensitive parameter of the transistor was determined. The life of the sample was obtained from products＇ performance degradation data. In estimating the lifetimes, the common three distributions of＇ the failure times were determined based on the identification of the degradation mechanism. The failure times obtained from the ADT were converted into those under normal temperature and humidity storage conditions assuming Peck temperature humidity model. Finally, an analysis was given to demonstrate the degradation of the test samples＇ performance parameters. The results can provide some reference for researching further storage reliability of the home-made transistor.